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.1 A Small Signal Field Effect Transistors (FET) 4

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DMB53D0UV-13 by Diodes Incorporated

DMB53D0UV-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;

HIGH RELIABILITY

.1 A

SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE

200

50 V

.16 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

AEC-Q101

Other Transistors

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

.3 V

DMB53D0UDW-7 by Diodes Incorporated

DMB53D0UDW-7

Diodes Incorporated

DMB53D0UDW-7 by Diodes Inc. is a N-channel FET with VCEsat of 0.3V, DS Breakdown Voltage of 50V, and Drain-Source On Resistance of 4Ω. Ideal for switching applications, it features a built-in bipolar transistor and diode in a small outline package suitable for surface mount technology. Operating at up to 150°C, this MOSFET has a max collector current of 0.1A and DC current gain of 200 hFE.

HIGH RELIABILITY

.1 A

SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE

200

50 V

.16 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

.3 V

DMB53D0UV-7 by Diodes Incorporated

DMB53D0UV-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-F6;

HIGH RELIABILITY

.1 A

SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE

200

50 V

.16 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

.3 V

DMB54D0UDW-7 by Diodes Incorporated

DMB54D0UDW-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Maximum VCEsat: .4 V;

ESD PROTECTION, LOW THRESHOLD

.1 A

SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE

220

50 V

.16 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.25 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

.4 V