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COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE Small Signal Field Effect Transistors (FET) 2

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
UM5K1NTR by ROHM

UM5K1NTR

ROHM

ROHM UM5K1NTR is a N-CHANNEL FET with 2 elements & built-in diode for switching applications. Features include 30V DS breakdown voltage, 0.1A max drain current, and 8 ohm max on resistance. Ideal for common source configuration in small outline packages at up to 150°C operating temp.

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

.1 A

.1 A

8 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G5

e2

2

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.15 W

Not Qualified

FET General Purpose Power

YES

TIN COPPER

GULL WING

DUAL

SWITCHING

SILICON

DMP2101UCB9-7 by Diodes Incorporated

DMP2101UCB9-7

Diodes Incorporated

P-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 12.6 pF; No. of Terminals: 9; Peak Reflow Temperature (C): 260;

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

3.2 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

12.6 pF

S-PBGA-B9

e1

1

2

9

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

GRID ARRAY

260

P-CHANNEL

1.56 W

YES

TIN SILVER COPPER

BALL

BOTTOM

SWITCHING

SILICON