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Taiwan Semiconductor Small Signal Bipolar Junction Transistors (BJT) 2

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BC548CB1G by Taiwan Semiconductor

BC548CB1G

Taiwan Semiconductor

BC548CB1G by Taiwan Semiconductor is a NPN BJT with max power dissipation of 0.5W and min hFE of 420. It operates at up to 150°C, handles max IC of 0.1A, and has matte tin terminal finish. Ideal for small signal applications in various electronic circuits due to its single configuration and high DC current gain.

.1 A

SINGLE

420

e3

1

1

150 Cel

260

NPN

.5 W

Other Transistors

NO

MATTE TIN

10

BC549CB1G by Taiwan Semiconductor

BC549CB1G

Taiwan Semiconductor

BC549CB1G by Taiwan Semiconductor is a NPN BJT transistor with max. power dissipation of 0.5W, hFE of 420, and VCE of 30V. Ideal for switching applications due to its single configuration and through-hole terminal form in a cylindrical package style. Operating temp ranges from -65°C to 150°C making it suitable for various electronic devices.

.1 A

30 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.5 W

.5 W

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

10

SWITCHING

SILICON