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90 MHz Small Signal Bipolar Junction Transistors (BJT) 2

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2N3859AD75Z by Fairchild Semiconductor

2N3859AD75Z

Fairchild Semiconductor

2N3859AD75Z by Fairchild Semiconductor is a NPN bipolar junction transistor with a max collector-emitter voltage of 60V and a max collector current of 0.5A. It has a min DC current gain of 100, making it suitable for switching applications. With a nominal transition frequency of 90MHz, this transistor is ideal for high-frequency operations in various electronic circuits.

.5 A

60 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.2 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

90 MHz

2SD1760TLQ by ROHM

2SD1760TLQ

ROHM

ROHM 2SD1760TLQ is a NPN BJT transistor with max. power dissipation of 15W and max. collector current of 3A. Ideal for switching applications, it has a min. DC current gain of 120 (hFE) and operates up to 150°C. Its small outline package makes it suitable for surface mount designs in various electronic circuits.

3 A

50 V

SINGLE

120

R-PSSO-G2

e2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

15 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn/Cu)

GULL WING

SINGLE

10

SWITCHING

SILICON

90 MHz