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210 MHz Small Signal Bipolar Junction Transistors (BJT) 6

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BC337-40RL1G by Onsemi

BC337-40RL1G

Onsemi

BC337-40RL1G by Onsemi is a NPN BJT transistor with hFE of 250, IC of 0.8A, and VCE of 45V. Ideal for amplifier applications, it has a max power dissipation of 1.5W and operates b/w -55 to 150 °C. Package style is cylindrical with through-hole terminals.

EUROPEAN PART NUMBER

.8 A

45 V

SINGLE

250

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

210 MHz

BC337-16RL1G by Onsemi

BC337-16RL1G

Onsemi

BC337-16RL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 100, and max. collector-emitter voltage of 45V. Ideal for amplifier applications due to its high transition frequency of 210MHz and max. collector current of 0.8A in a cylindrical package style.

EUROPEAN PART NUMBER

.8 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

AMPLIFIER

SILICON

210 MHz

BC337ZL1G by Onsemi

BC337ZL1G

Onsemi

BC337ZL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 100, and max. collector-emitter voltage of 45V. It is commonly used in amplifier applications due to its high transition frequency of 210MHz and max. collector current of 0.8A, making it suitable for various electronic circuits requiring signal amplification.

EUROPEAN PART NUMBER

.8 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

210 MHz

BC338-25ZL1G by Onsemi

BC338-25ZL1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 210 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .8 A;

EUROPEAN PART NUMBER

.8 A

25 V

SINGLE

160

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

210 MHz

BC337-25RLRAG by Onsemi

BC337-25RLRAG

Onsemi

BC337-25RLRAG by Onsemi is a NPN BJT transistor with hFE of 160, IC of 0.8A, and fT of 210MHz. Ideal for amplifier applications due to its max power dissipation of 0.625W and operating temperature up to 150 °C in a cylindrical package.

.8 A

45 V

SINGLE

160

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

210 MHz

PDTD114EQA,147 by Nexperia

PDTD114EQA,147

Nexperia

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 210 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

BUILT IN BIAS RESISTANCE RATIO IS 1

COLLECTOR

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

210 MHz