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125 MHz Small Signal Bipolar Junction Transistors (BJT) 49

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BCX5316H6433XTMA1 by Infineon Technologies

BCX5316H6433XTMA1

Infineon Technologies

BCX5316H6433XTMA1 by Infineon is a PNP BJT transistor with hFE of 100, VCE of 80V, and IC of 1A. Ideal for amplifier applications, it operates up to 150°C with a transition frequency of 125MHz. Suitable for surface mount designs in automotive electronics per AEC-Q101 standard.

COLLECTOR

1 A

80 V

SINGLE

100

R-PSSO-F3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

AEC-Q101

YES

FLAT

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

125 MHz