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120 MHz Small Signal Bipolar Junction Transistors (BJT) 9

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ZXTC6717MCQTA by Diodes Incorporated

ZXTC6717MCQTA

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 4.5 A; Terminal Form: NO LEAD;

HIGH RELIABILITY

COLLECTOR

4.5 A

15 V

SEPARATE, 2 ELEMENTS

150

R-PDSO-N8

e4

1

2

8

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

120 MHz

RN6002 by Toshiba

RN6002

Toshiba

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 2 A;

BUILT IN BIAS RESISTOR

COLLECTOR

2 A

30 V

SINGLE WITH BUILT-IN RESISTOR

50

R-PSSO-F3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1 W

.5 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

FLAT

SINGLE

SWITCHING

SILICON

120 MHz

.5 V

2SB1386T100R by ROHM

2SB1386T100R

ROHM

ROHM 2SB1386T100R is a PNP BJT transistor with VCEsat of 1V, hFE of 180, and IC of 5A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 120MHz. Its small outline package makes it suitable for surface mount designs.

COLLECTOR

5 A

20 V

SINGLE

180

R-PSSO-F3

e2

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

2 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn/Cu)

FLAT

SINGLE

10

SWITCHING

SILICON

120 MHz

1 V

2STL1525 by STMicroelectronics

2STL1525

STMicroelectronics

2STL1525 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 1W, a collector current of up to 5A, and operates at temperatures up to 150 °C. Its cylindrical package ensures easy integration in various circuits.

5 A

25 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

120 MHz

2DB1188P-13 by Diodes Incorporated

2DB1188P-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

32 V

SINGLE

82

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

120 MHz

2PB710AR,115 by NXP Semiconductors

2PB710AR,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Base Capacitance: 15 pF;

.5 A

15 pF

50 V

SINGLE

40

TO-236

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

120 MHz

.6 V

KTC4373O-TP by Micro Commercial Components

KTC4373O-TP

Micro Commercial Components

KTC4373O-TP by Micro Commercial Components is a NPN BJT with hFE of 80, VCE of 120V, and IC of 0.8A. Ideal for small outline applications requiring high transition frequency up to 120MHz in temperatures up to 150°C.

LOW NOISE

.8 A

120 V

SINGLE

80

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Matte Tin (Sn)

FLAT

SINGLE

10

SILICON

120 MHz

KTC4373Y-TP by Micro Commercial Components

KTC4373Y-TP

Micro Commercial Components

KTC4373Y-TP by Micro Commercial Components is a NPN BJT transistor with hFE of 120, VCE of 120V, and fT of 120MHz. Ideal for small signal applications in electronics due to its high gain, low collector current, and fast transition frequency. Suitable for surface mount designs requiring compact outline and high temperature tolerance up to 150°C.

LOW NOISE

.8 A

120 V

SINGLE

120

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Matte Tin (Sn)

FLAT

SINGLE

10

SILICON

120 MHz

2SC3303-Y(T6L1,NQ) by Toshiba

2SC3303-Y(T6L1,NQ)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 5 A;

COLLECTOR

5 A

80 V

SINGLE

120

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1 W

20 W

YES

GULL WING

SINGLE

SWITCHING

SILICON

120 MHz

.4 V