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10 W Small Signal Bipolar Junction Transistors (BJT) 5

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2SD2143TL by ROHM

2SD2143TL

ROHM

ROHM 2SD2143TL is a NPN BJT with Darlington configuration, built-in diode and resistor. It has max power dissipation of 10W, hFE of 1000, and operates up to 150°C. Ideal for switching applications due to its high collector current (2A) and transition frequency (80MHz).

BUILT IN BIAS RESISTANCE RATIO IS 0.0857

COLLECTOR

2 A

70 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

1000

R-PSSO-G2

e2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

10 W

10 W

Not Qualified

Other Transistors

YES

TIN COPPER

GULL WING

SINGLE

10

SWITCHING

SILICON

80 MHz

2SB1181TL/Q by ROHM

2SB1181TL/Q

ROHM

ROHM's 2SB1181TL/Q is a PNP BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 1A. Ideal for switching applications, it has a max operating temp of 150°C and can handle power dissipation up to 10W in a small outline package.

COLLECTOR

1 A

80 V

SINGLE

120

R-PSSO-G2

e2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

10 W

10 W

Not Qualified

Other Transistors

YES

TIN COPPER

GULL WING

SINGLE

10

SWITCHING

SILICON

100 MHz

.4 V

2SA1727TLQ by ROHM

2SA1727TLQ

ROHM

ROHM 2SA1727TLQ is a PNP BJT transistor with max. collector-emitter voltage of 400V and max. power dissipation of 10W. With hFE of min. 120, it's ideal for switching applications in small outline packages at up to 150°C operating temperature.

.5 A

400 V

SINGLE

120

R-PSSO-G2

e2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

10 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn98Cu2)

GULL WING

SINGLE

10

SWITCHING

SILICON

12 MHz

2SC5001TLQ by ROHM

2SC5001TLQ

ROHM

ROHM 2SC5001TLQ is a NPN BJT transistor with max. power dissipation of 10W, hFE of 120, and fT of 150MHz. Ideal for switching applications in small outline packages due to its high collector current and voltage capabilities.

10 A

20 V

SINGLE

120

R-PSSO-G2

e2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

10 W

Not Qualified

Other Transistors

YES

TIN COPPER

GULL WING

SINGLE

10

SWITCHING

SILICON

150 MHz

KSB772YSTSTU by Fairchild Semiconductor

KSB772YSTSTU

Fairchild Semiconductor

KSB772YSTSTU by Fairchild Semiconductor is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 10W, hFE of 160, and operates at up to 150°C. With a max VCE of 30V and IC of 3A, it offers high performance in a rectangular package suitable for flange mount installations.

3 A

30 V

SINGLE

160

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

10 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

80 MHz