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1.3 W Small Signal Bipolar Junction Transistors (BJT) 1

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2SA1575E-TD-E by Onsemi

2SA1575E-TD-E

Onsemi

Onsemi's 2SA1575E-TD-E is a PNP Darlington transistor with max VCEsat of 1V, hFE of 100, and fT of 400MHz. Ideal for amplifier applications due to its high gain and frequency response capabilities. Suitable for surface mount designs with small outline package style.

COLLECTOR

.1 A

2.3 pF

200 V

DARLINGTON

100

R-PSSO-F3

e6

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.5 W

1.3 W

YES

Tin/Bismuth (Sn/Bi)

FLAT

SINGLE

AMPLIFIER

SILICON

400 MHz

1 V