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.41 W Small Signal Bipolar Junction Transistors (BJT) 2

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DMN61D9UDW-13 by Diodes Incorporated

DMN61D9UDW-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .41 W; Maximum Feedback Capacitance (Crss): 2.5 pF; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

.35 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

2.5 pF

R-PDSO-G6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.41 W

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN61D9UDW-7 by Diodes Incorporated

DMN61D9UDW-7

Diodes Incorporated

DMN61D9UDW-7 by Diodes Inc. is a N-CHANNEL BJT with 60V DS Breakdown Voltage, 0.35A ID, and 3.5 ohm RDS(on). Ideal for SWITCHING applications in small outline packages, operating from -55 to 150 °C.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

.35 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

2.5 pF

R-PDSO-G6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.41 W

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON