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.297 W Small Signal Bipolar Junction Transistors (BJT) 1

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NSBC124XF3T5G by Onsemi

NSBC124XF3T5G

Onsemi

NSBC124XF3T5G by Onsemi is a NPN BJT with built-in resistor for switching applications. It has max. collector-emitter voltage of 50V, max. collector current of 0.1A, and min. DC current gain of 80 (hFE). This small outline transistor in plastic package is ideal for surface mount designs.

BUILT IN BIAS RESISTANCE RATIO IS 2.14

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.297 W

BIP General Purpose Small Signals

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON