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.08 A Small Signal Bipolar Junction Transistors (BJT) 16

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
RN1101ACT(TPL3) by Toshiba

RN1101ACT(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; Minimum DC Current Gain (hFE): 30; No. of Elements: 1;

.08 A

30

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1102ACT(TPL3) by Toshiba

RN1102ACT(TPL3)

Toshiba

Toshiba's RN1102ACT(TPL3) is a NPN BJT transistor with 0.1W power dissipation, 50 min hFE, and 0.08A max IC. Ideal for small signal applications in surface mount designs due to its silicon element material.

.08 A

50

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1103ACT(TPL3) by Toshiba

RN1103ACT(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Transistor Element Material: SILICON;

.08 A

70

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1104ACT(TPL3) by Toshiba

RN1104ACT(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Transistor Element Material: SILICON;

.08 A

80

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1105ACT(TPL3) by Toshiba

RN1105ACT(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; Transistor Element Material: SILICON; No. of Elements: 1;

.08 A

80

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1106ACT(TPL3) by Toshiba

RN1106ACT(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 80;

.08 A

80

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1107ACT(TPL3) by Toshiba

RN1107ACT(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Transistor Element Material: SILICON;

.08 A

80

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1108ACT(TPL3) by Toshiba

RN1108ACT(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Transistor Element Material: SILICON;

.08 A

80

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1109ACT(TPL3) by Toshiba

RN1109ACT(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; Minimum DC Current Gain (hFE): 70; No. of Elements: 1;

.08 A

70

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1112ACT(TPL3) by Toshiba

RN1112ACT(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; Transistor Element Material: SILICON; No. of Elements: 1;

.08 A

120

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1113ACT(TPL3) by Toshiba

RN1113ACT(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 120;

.08 A

120

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2107ACT(TPL3) by Toshiba

RN2107ACT(TPL3)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Transistor Element Material: SILICON;

.08 A

80

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2108ACT(TPL3) by Toshiba

RN2108ACT(TPL3)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 80;

.08 A

80

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2101ACT(TPL3) by Toshiba

RN2101ACT(TPL3)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; Minimum DC Current Gain (hFE): 30; Transistor Element Material: SILICON;

.08 A

30

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2102ACT(TPL3) by Toshiba

RN2102ACT(TPL3)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 50;

.08 A

50

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2104ACT(TPL3) by Toshiba

RN2104ACT(TPL3)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; Minimum DC Current Gain (hFE): 80; No. of Elements: 1;

.08 A

80

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON