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SINGLE WITH BUILT-IN DIODE Small Signal Bipolar Junction Transistors (BJT) 17

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
STL73D-AP by STMicroelectronics

STL73D-AP

STMicroelectronics

STL73D-AP by STMicroelectronics is a NPN BJT transistor with 400V max collector-emitter voltage, 1.5A max collector current, and 1.5W max power dissipation. Ideal for switching applications due to its single configuration with built-in diode and fast turn-off time of 4700ns. Package style is cylindrical with matte tin terminal finish.

1.5 A

400 V

SINGLE WITH BUILT-IN DIODE

4

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

4700 ns

UML6NTR by ROHM

UML6NTR

ROHM

ROHM's UML6NTR is a NPN BJT with built-in diode for switching applications. It has 5 terminals, max power dissipation of 0.12W, and max collector current of 0.5A. With a transition frequency of 320MHz, it operates at up to 150°C and has a max collector-emitter voltage of 12V.

.5 A

12 V

SINGLE WITH BUILT-IN DIODE

270

R-PDSO-G5

e2

1

1

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.12 W

Not Qualified

Other Transistors

YES

TIN COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

320 MHz

PMD4001K,115 by NXP Semiconductors

PMD4001K,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Terminal Finish: TIN; JESD-609 Code: e3;

.1 A

40 V

SINGLE WITH BUILT-IN DIODE

24

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

398 ns

17 ns

PMEM1505NG,115 by NXP Semiconductors

PMEM1505NG,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 420 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .5 A;

.5 A

15 V

SINGLE WITH BUILT-IN DIODE

90

R-PDSO-G5

e3

1

5

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.8 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

420 MHz

PMEM1505PG,115 by NXP Semiconductors

PMEM1505PG,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 280 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

.5 A

15 V

SINGLE WITH BUILT-IN DIODE

90

R-PDSO-G5

e3

1

5

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

280 MHz

PMEM4010ND,115 by NXP Semiconductors

PMEM4010ND,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;

1 A

40 V

SINGLE WITH BUILT-IN DIODE

200

R-PDSO-G6

e3

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

PMEM4010PD,115 by NXP Semiconductors

PMEM4010PD,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;

1 A

40 V

SINGLE WITH BUILT-IN DIODE

160

R-PDSO-G6

e3

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

PMEM4020AND,115 by NXP Semiconductors

PMEM4020AND,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .95 A;

.95 A

40 V

SINGLE WITH BUILT-IN DIODE

200

R-PDSO-G6

e3

1

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

PMEM4020ND,115 by NXP Semiconductors

PMEM4020ND,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A; Terminal Form: GULL WING;

2 A

40 V

SINGLE WITH BUILT-IN DIODE

75

R-PDSO-G6

e3

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

QSL12TR by ROHM

QSL12TR

ROHM

ROHM QSL12TR is a NPN BJT with 5 terminals, 0.5W power dissipation, and 270 min hFE. Ideal for switching applications, it has a max operating temp of 125°C and can handle up to 1A collector current. The transistor's package is surface mountable with Gull Wing terminals in a small outline shape.

1 A

30 V

SINGLE WITH BUILT-IN DIODE

270

R-PDSO-G5

e1

1

1

5

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

320 MHz

PMEM4020APD,115 by NXP Semiconductors

PMEM4020APD,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1.3 A;

1.3 A

40 V

SINGLE WITH BUILT-IN DIODE

50

R-PDSO-G6

e3

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

DVRN6056-7-F by Diodes Incorporated

DVRN6056-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;

.6 A

40 V

SINGLE WITH BUILT-IN DIODE

40

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

250 MHz

255 ns

35 ns

DVR2V5W-7 by Diodes Incorporated

DVR2V5W-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): 1 A;

1 A

18 V

SINGLE WITH BUILT-IN DIODE

150

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

100 MHz

DVR3V3W-7 by Diodes Incorporated

DVR3V3W-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): 1 A;

1 A

18 V

SINGLE WITH BUILT-IN DIODE

150

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

100 MHz

STBV42D by STMicroelectronics

STBV42D

STMicroelectronics

STBV42D by STMicroelectronics is an NPN small signal BJT designed for switching applications. It features a max collector-emitter voltage of 400V, a min DC current gain (hFE) of 5, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management.

1 A

400 V

SINGLE WITH BUILT-IN DIODE

5

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

DSM80100M-7 by Diodes Incorporated

DSM80100M-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;

.5 A

80 V

SINGLE WITH BUILT-IN DIODE

120

R-PDSO-G6

e3

1

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

YES

MATTE TIN

GULL WING

DUAL

SILICON

DSM80101M-7 by Diodes Incorporated

DSM80101M-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDSO-G6; Minimum DC Current Gain (hFE): 120;

.5 A

80 V

SINGLE WITH BUILT-IN DIODE

120

R-PDSO-G6

e3

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

MATTE TIN

GULL WING

DUAL

SILICON