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COMMON BASE, 2 ELEMENTS WITH BUILT-IN RESISTOR Small Signal Bipolar Junction Transistors (BJT) 1

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
UMC2NT1G by Onsemi

UMC2NT1G

Onsemi

UMC2NT1G by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features a max VCEsat of 0.25V, common base configuration, and built-in resistor elements. Ideal for switching applications, this transistor has a max collector-emitter voltage of 50V and operates b/w -65 to 150 °C temperatures.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

COMMON BASE, 2 ELEMENTS WITH BUILT-IN RESISTOR

60

R-PDSO-G5

e3

1

2

5

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

Tin (Sn)

GULL WING

DUAL

40

SWITCHING

SILICON

.25 V