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Vishay Intertechnology RF Small Signal Field Effect Transistors (FET) 1

RF Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
2N4416-E3 by Vishay Intertechnology

2N4416-E3

Vishay Intertechnology

2N4416-E3 by Vishay Intertechnology is an N-CHANNEL FET with 10 dB Gp, operating in DEPLETION MODE. It operates in ULTRA HIGH FREQUENCY BAND for SWITCHING applications. With a max power dissipation of 0.3 W and Crss of 0.8 pF, it's ideal for RF circuits requiring high frequency performance.

LOW NOISE

SINGLE

JUNCTION

.8 pF

ULTRA HIGH FREQUENCY BAND

TO-206AF

O-MBCY-W4

e3

1

1

4

DEPLETION MODE

150 Cel

METAL

ROUND

CYLINDRICAL

N-CHANNEL

.3 W

10 dB

Not Qualified

Other Transistors

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON