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.18 W RF Small Signal Field Effect Transistors (FET) 8

RF Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
BF1211,215 by NXP Semiconductors

BF1211,215

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Terminal Finish: TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

LOW NOISE

SOURCE

COMPLEX

6 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.03 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

2

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.18 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF1211R,215 by NXP Semiconductors

BF1211R,215

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Terminal Form: GULL WING; Operating Mode: DUAL GATE, ENHANCEMENT MODE;

LOW NOISE

SOURCE

COMPLEX

6 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.03 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

2

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.18 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF1211WR,115 by NXP Semiconductors

BF1211WR,115

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; JESD-30 Code: R-PDSO-G4; Qualification: Not Qualified;

LOW NOISE

SOURCE

COMPLEX

6 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.03 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

2

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.18 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF1212,215 by NXP Semiconductors

BF1212,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; No. of Elements: 1; Terminal Position: DUAL;

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

6 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.03 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.18 W

Not Qualified

FET General Purpose Powers

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF1212R,215 by NXP Semiconductors

BF1212R,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Minimum DS Breakdown Voltage: 6 V;

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

6 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.03 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.18 W

Not Qualified

FET General Purpose Powers

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF1212WR,115 by NXP Semiconductors

BF1212WR,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; No. of Terminals: 4; Operating Mode: DUAL GATE, ENHANCEMENT MODE;

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

6 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.03 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.18 W

Not Qualified

FET General Purpose Powers

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF1208,115 by NXP Semiconductors

BF1208,115

NXP Semiconductors

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; JESD-609 Code: e3; Operating Mode: ENHANCEMENT MODE; No. of Elements: 2;

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F6

e3

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.18 W

23 dB

Not Qualified

FET General Purpose Power

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON

BF1207,115 by NXP Semiconductors

BF1207,115

NXP Semiconductors

NXP Semiconductors' BF1207,115 is a N-CHANNEL RF FET with 6V DS breakdown voltage and 21dB power gain. Ideal for amplifier applications in UHF band, it operates in dual gate enhancement mode with 0.03A max drain current and 0.18W power dissipation.

LOW NOISE

ISOLATED

SINGLE

6 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G6

e3

2

6

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.18 W

21 dB

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON