46000 MHz RF Small Signal Bipolar Junction Transistors (BJT) 2

RF Small Signal Bipolar Junction Transistors (BJT)

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    • N-CHANNEL
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    • COMMON EMITTER, 2 ELEMENTS
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    • SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
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    • SINGLE
    • SINGLE WITH BUILT IN ACTIVE BIASING ELEMENT
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    • NO
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    • .75 MHz
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    • 11.2 MHz
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    • 110 MHz
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    • 11000 MHz
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    • 1150 MHz
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    • .016 W
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    • .04 W
    • .045 W
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    • .054 W
    • .055 W
    • .06 W
    • .08 W
    • .085 W
    • .09 W
    • .1 W
    • .105 W
    • .11 W
    • .115 W
    • .12 W
    • .125 W
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    • .14 W
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    • .162 W
    • .175 W
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    • .24 W
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    • .273 W
    • .28 W
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    • .295 W
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    • 150 W
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    • 4.9 W
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    • .00009 A
    • .0001 A
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    • .0005 A
    • .002 A
    • .0036 A
    • .004 A
    • .005 A
    • .006 A
    • .0065 A
    • .007 A
    • .008 A
    • .01 A
    • .0113 A
    • .012 A
    • .015 A
    • .016 A
    • .018 A
    • .02 A
    • .024 A
    • .025 A
    • .026 A
    • .03 A
    • .032 A
    • .035 A
    • .036 A
    • .037 A
    • .04 A
    • .045 A
    • .05 A
    • .055 A
    • .06 A
    • .065 A
    • .07 A
    • .075 A
    • .08 A
    • .09 A
    • .1 A
    • .12 A
    • .15 A
    • .2 A
    • .21 A
    • .23 A
    • .25 A
    • .3 A
    • .32 A
    • .35 A
    • .4 A
    • .425 A
    • .5 A
    • .6 A
    • .64 A
    • .65 A
    • .7 A
    • .75 A
    • .8 A
    • 1 A
    • 1.1 A
    • 1.25 A
    • 10 A
    • 120 A
    • 3 A
    • 6 A
    • 7 A
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BFP640FESDH6327XTSA1 by Infineon Technologies

BFP640FESDH6327XTSA1

Infineon Technologies

BFP640FESDH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4.1V VCE, 0.05A IC, and fT of 46GHz. It is used for X Band amplifier applications in automotive electronics, meeting AEC-Q101 standards. This surface-mount device has a small outline package with 4 terminals and silicon germanium carbon element material.

.05 A

4.1 V

SINGLE

X BAND

R-PDSO-F4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON GERMANIUM CARBON

46000 MHz

BFP640FESDE6327 by Infineon Technologies

BFP640FESDE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 46000 MHz; Maximum Collector Current (IC): .05 A; Highest Frequency Band: X BAND;

.05 A

4.1 V

SINGLE

X BAND

R-PDSO-F4

1

4

150 Cel

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

FLAT

DUAL

AMPLIFIER

SILICON GERMANIUM CARBON

46000 MHz

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