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20000 MHz RF Small Signal Bipolar Junction Transistors (BJT) 3

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
2SC5508-A by Renesas Electronics

2SC5508-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 20000 MHz; Maximum Power Dissipation (Abs): .115 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

50

1

150 Cel

NPN

.115 W

Other Transistors

YES

20000 MHz

2SC5508-T2-A by Renesas Electronics

2SC5508-T2-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 20000 MHz; Maximum Power Dissipation (Abs): .115 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

50

1

150 Cel

NPN

.115 W

Other Transistors

YES

20000 MHz

BFP780H6327XTSA1 by Infineon Technologies

BFP780H6327XTSA1

Infineon Technologies

BFP780H6327XTSA1 by Infineon is a NPN RF BJT with 4 terminals, operating at -40°C to 6.1V. It's a single-configured transistor for ultra-high frequency amplification applications in small outline package style with Gull Wing terminals. With a max collector current of 0.12A and fT of 20GHz, it's ideal for high-frequency amplifier circuits requiring compact design.

EMITTER

.12 A

6.1 V

SINGLE

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

20000 MHz