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11000 MHz RF Small Signal Bipolar Junction Transistors (BJT) 3

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BFU530WF by NXP Semiconductors

BFU530WF

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Collector Current (IC): .04 A; Maximum Collector-Emitter Voltage: 12 V;

LOW NOISE

.04 A

12 V

SINGLE

L BAND

R-PDSO-G3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

AMPLIFIER

SILICON

11000 MHz

BFU530XVL by NXP Semiconductors

BFU530XVL

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A;

LOW NOISE

COLLECTOR

.065 A

.65 pF

16 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.45 W

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

11000 MHz

BFU550VL by NXP Semiconductors

BFU550VL

NXP Semiconductors

The NXP Semiconductors BFU550VL is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies. It has a max collector-emitter voltage of 16V, operating temperature up to 150°C, and transition frequency of 11GHz. This small outline transistor features Gull Wing terminals and can handle a max current of 0.05A.

LOW NOISE

COLLECTOR

.05 A

.72 pF

16 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.45 W

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

11000 MHz