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1100 MHz RF Small Signal Bipolar Junction Transistors (BJT) 2

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BF799E6327HTSA1 by Infineon Technologies

BF799E6327HTSA1

Infineon Technologies

BF799E6327HTSA1 by Infineon Technologies is a NPN RF BJT transistor with 3 terminals. It operates in the ultra high frequency band at 1100 MHz, suitable for switching applications. With a max power dissipation of 0.28 W and a collector-emitter voltage of 20 V, it is designed for small outline surface mount packages.

.035 A

20 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.28 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

SWITCHING

SILICON

1100 MHz

BF799WH6327XTSA1 by Infineon Technologies

BF799WH6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1100 MHz; Maximum Collector Current (IC): .035 A; Moisture Sensitivity Level (MSL): 1;

.035 A

20 V

SINGLE

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

1100 MHz