Loading...

1 W RF Small Signal Bipolar Junction Transistors (BJT) 8

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BFG135,115 by NXP Semiconductors

BFG135,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .15 A;

BUILT-IN EMITTER BALLASTING RESISTORS

COLLECTOR

.15 A

15 V

SINGLE

80

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

1 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

7000 MHz

BFG198,115 by NXP Semiconductors

BFG198,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;

COLLECTOR

.1 A

10 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

1 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

8000 MHz

BFG31,115 by NXP Semiconductors

BFG31,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

1 W

Not Qualified

CECC

Other Transistors

YES

Matte Tin (Sn)

GULL WING

DUAL

40

AMPLIFIER

SILICON

5000 MHz

BFG35,115 by NXP Semiconductors

BFG35,115

NXP Semiconductors

NXP Semiconductors' BFG35,115 is a NPN RF BJT transistor with 4 terminals. It operates in the ultra-high frequency band up to 4000 MHz and has a max power dissipation of 1W. Ideal for amplifier applications, this transistor features a small outline package with Gull Wing terminals for surface mounting.

COLLECTOR

.15 A

18 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

1 W

Not Qualified

CECC

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON

4000 MHz

BFG97,115 by NXP Semiconductors

BFG97,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;

COLLECTOR

.1 A

15 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

1 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5500 MHz

BFQ149,115 by NXP Semiconductors

BFQ149,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;

COLLECTOR

.1 A

15 V

SINGLE

20

C BAND

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

1 W

Not Qualified

CECC

Other Transistors

YES

TIN

FLAT

SINGLE

30

AMPLIFIER

SILICON

5000 MHz

BFQ18A,115 by NXP Semiconductors

BFQ18A,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .15 A;

COLLECTOR

.15 A

18 V

SINGLE

25

S BAND

R-PSSO-F3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

1 W

Not Qualified

CECC

Other Transistors

YES

Tin (Sn)

FLAT

SINGLE

30

AMPLIFIER

SILICON

4000 MHz

BFG97,135 by NXP Semiconductors

BFG97,135

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;

COLLECTOR

.1 A

15 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

IEC-134

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5500 MHz