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.4 W RF Small Signal Bipolar Junction Transistors (BJT) 2

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
NTE123A by Nte Electronics

NTE123A

Nte Electronics

NTE123A by Nte Electronics is a NPN RF BJT transistor with max. collector-emitter voltage of 40V, fT of 300MHz, and hFE min. of 100. Ideal for high-frequency switching applications due to its very high frequency band capability and max. power dissipation of 0.4W in a cylindrical package with wire terminals.

.8 A

40 V

SINGLE

100

VERY HIGH FREQUENCY BAND

TO-18

O-MBCY-W3

1

3

METAL

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

.4 W

Not Qualified

Other Transistors

NO

WIRE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

300 MHz

BFG10W/X,115 by NXP Semiconductors

BFG10W/X,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .25 A; Package Body Material: PLASTIC/EPOXY;

HIGH RELIABILITY

COLLECTOR

.25 A

3 pF

10 V

SINGLE

25

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.4 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON