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.16 W RF Small Signal Bipolar Junction Transistors (BJT) 5

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BFP740F-E6327 by Infineon Technologies

BFP740F-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 42000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .045 A;

.045 A

.14 pF

4 V

SINGLE

160

X BAND

R-PDSO-F4

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.16 W

12.5 dB

Other Transistors

YES

FLAT

DUAL

AMPLIFIER

SILICON GERMANIUM CARBON

42000 MHz

BFP740FESDE6327 by Infineon Technologies

BFP740FESDE6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 47000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .045 A;

.045 A

.08 pF

4.2 V

SINGLE

160

X BAND

R-PDSO-F4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.16 W

12.5 dB

YES

FLAT

DUAL

AMPLIFIER

SILICON GERMANIUM CARBON

47000 MHz

BFP420E6327BTSA1 by Infineon Technologies

BFP420E6327BTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .035 A;

HIGH RELIABILITY, LOW NOISE, TR, 7 INCH : 3000

EMITTER

.035 A

.3 pF

4.5 V

SINGLE

60

X BAND

R-PDSO-G4

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.16 W

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

25000 MHz

BFP420E6433HTMA1 by Infineon Technologies

BFP420E6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .035 A;

HIGH RELIABILITY, LOW NOISE, TR, 7 INCH : 3000

EMITTER

.035 A

.3 pF

4.5 V

SINGLE

60

X BAND

R-PDSO-G4

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.16 W

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

25000 MHz

BFP740E6327HTSA1 by Infineon Technologies

BFP740E6327HTSA1

Infineon Technologies

BFP740E6327HTSA1 by Infineon is a NPN RF BJT with 19.5 dB power gain, ideal for C band applications. It has a max operating temp of 150°C, fT of 44 GHz, and can handle up to 0.045 A collector current. This small outline transistor is designed for amplifier circuits requiring high frequency performance.

.045 A

.08 pF

4 V

SINGLE

160

C BAND

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.16 W

19.5 dB

YES

GULL WING

DUAL

AMPLIFIER

SILICON GERMANIUM CARBON

44000 MHz