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.135 W RF Small Signal Bipolar Junction Transistors (BJT) 3

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BFG425W,115 by NXP Semiconductors

BFG425W,115

NXP Semiconductors

BFG425W,115 by NXP Semiconductors is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is designed for switching applications in the L Band frequency range up to 25 GHz. This surface mount transistor has a max power dissipation of 0.135 W and can handle a max collector current of 0.03 A.

EMITTER

.03 A

4.5 V

SINGLE

50

L BAND

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.135 W

.135 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

40

SWITCHING

SILICON

25000 MHz

BFG424W,115 by NXP Semiconductors

BFG424W,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .135 W; Maximum Collector Current (IC): .03 A;

LOW NOISE

.03 A

4.5 V

SINGLE

50

L BAND

R-PDSO-F4

e3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.135 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

25000 MHz

BFG424F,115 by NXP Semiconductors

BFG424F,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .135 W; Maximum Collector Current (IC): .03 A;

LOW NOISE

.03 A

4.5 V

SINGLE

50

L BAND

R-PDSO-F4

e3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.135 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

25000 MHz