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.03 A RF Small Signal Bipolar Junction Transistors (BJT) 10

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BFU730F,115 by NXP Semiconductors

BFU730F,115

NXP Semiconductors

NXP Semiconductors' BFU730F,115 is an NPN RF BJT with max. power dissipation of 0.197W and min. DC current gain of 205. Ideal for surface mount applications, it has a max. collector current of 0.03A and uses silicon germanium material.

.03 A

205

e3

1

1

260

NPN

.197 W

BIP RF Small Signal

YES

TIN

30

SILICON GERMANIUM

NE68530-T1-A by Renesas Electronics

NE68530-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 12000 MHz; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

LOW NOISE

.03 A

.7 pF

6 V

SINGLE

75

S BAND

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

Other Transistors

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

12000 MHz

NE68539-T1-A by Renesas Electronics

NE68539-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 12000 MHz; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

LOW NOISE

.03 A

.5 pF

6 V

SINGLE

S BAND

R-PDSO-G4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

GULL WING

DUAL

AMPLIFIER

SILICON

12000 MHz

BFG425W,115 by NXP Semiconductors

BFG425W,115

NXP Semiconductors

BFG425W,115 by NXP Semiconductors is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is designed for switching applications in the L Band frequency range up to 25 GHz. This surface mount transistor has a max power dissipation of 0.135 W and can handle a max collector current of 0.03 A.

EMITTER

.03 A

4.5 V

SINGLE

50

L BAND

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.135 W

.135 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

40

SWITCHING

SILICON

25000 MHz

BFG424W,115 by NXP Semiconductors

BFG424W,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .135 W; Maximum Collector Current (IC): .03 A;

LOW NOISE

.03 A

4.5 V

SINGLE

50

L BAND

R-PDSO-F4

e3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.135 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

25000 MHz

BFG424F,115 by NXP Semiconductors

BFG424F,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .135 W; Maximum Collector Current (IC): .03 A;

LOW NOISE

.03 A

4.5 V

SINGLE

50

L BAND

R-PDSO-F4

e3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.135 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

25000 MHz

BF888H6327 by Infineon Technologies

BF888H6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 47000 MHz; Maximum Collector Current (IC): .03 A; Case Connection: EMITTER;

LOW NOISE

EMITTER

.03 A

.14 pF

4 V

SINGLE

C BAND

R-PDSO-G4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

47000 MHz

2SC5065-O(TE85L,F) by Toshiba

2SC5065-O(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .03 A;

LOW NOISE

.03 A

.9 pF

12 V

SINGLE

80

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.1 W

.1 W

YES

GULL WING

DUAL

AMPLIFIER

SILICON

7000 MHz

2SC5065-Y(TE85L,F) by Toshiba

2SC5065-Y(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .03 A;

LOW NOISE

.03 A

.9 pF

12 V

SINGLE

120

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.1 W

.1 W

YES

GULL WING

DUAL

AMPLIFIER

SILICON

7000 MHz

2SC5066-O,LF by Toshiba

2SC5066-O,LF

Toshiba

Toshiba's 2SC5066-O,LF is an NPN RF BJT transistor with a max fT of 7000 MHz. It has a max IC of 0.03 A and hFE of 80, suitable for amplifier applications in the UHF band. The package is a small outline with gull wing terminals, making it ideal for surface mount designs.

LOW NOISE

.03 A

.9 pF

12 V

SINGLE

80

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.1 W

.1 W

YES

GULL WING

DUAL

AMPLIFIER

SILICON

7000 MHz