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Freescale Semiconductor RF Power Field Effect Transistors (FET) 2

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
MRF8P20140WHSR5 by Freescale Semiconductor

MRF8P20140WHSR5

Freescale Semiconductor

MRF8P20140WHSR5 by Freescale is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in S BAND, has 2 elements, and a max temp of 125°C. Commonly used as an amplifier in surface mount applications due to its ceramic-metal package body material.

SOURCE

COMMON SOURCE, 2 ELEMENTS

65 V

METAL-OXIDE SEMICONDUCTOR

S BAND

R-CDFP-F4

2

4

ENHANCEMENT MODE

125 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLATPACK

260

N-CHANNEL

Not Qualified

FET General Purpose Power

YES

FLAT

DUAL

40

AMPLIFIER

SILICON

MRF8P20165WHSR5 by Freescale Semiconductor

MRF8P20165WHSR5

Freescale Semiconductor

MRF8P20165WHSR5 by Freescale is an N-CHANNEL RF Power FET with 2 elements in a COMMON SOURCE configuration. It operates in the S BAND, has a 65V DS Breakdown Voltage, and can be used as an AMPLIFIER. The package is RECTANGULAR, made of CERAMIC/METAL, and supports surface mount technology.

SOURCE

COMMON SOURCE, 2 ELEMENTS

65 V

METAL-OXIDE SEMICONDUCTOR

S BAND

R-CDFP-F4

2

4

ENHANCEMENT MODE

125 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLATPACK

260

N-CHANNEL

Not Qualified

FET General Purpose Power

YES

FLAT

DUAL

40

AMPLIFIER

SILICON