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Ampleon Netherlands B V RF Power Field Effect Transistors (FET) 3

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
BLP10H610Z by Ampleon Netherlands B V

BLP10H610Z

Ampleon Netherlands B V

BLP10H610Z by Ampleon Netherlands B V is an N-CHANNEL RF Power FET with a PLASTIC/EPOXY package. It operates in ENHANCEMENT MODE, suitable for AMPLIFIER applications in L BAND frequencies. With 104V DS Breakdown Voltage and max temp of 150°C, it features a COMMON SOURCE configuration and METAL-OXIDE SEMICONDUCTOR technology.

SOURCE

COMMON SOURCE, 2 ELEMENTS

104 V

METAL-OXIDE SEMICONDUCTOR

L BAND

MO-229

R-PDSO-N12

2

12

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

IEC-60134

YES

NO LEAD

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

BLC9H10XS-350AY by Ampleon Netherlands B V

BLC9H10XS-350AY

Ampleon Netherlands B V

BLC9H10XS-350AY by Ampleon is an N-channel RF Power FET with a min DS Breakdown Voltage of 108V and a Min Power Gain of 17dB. It operates in the Ultra High Frequency Band, suitable for amplifier applications. The transistor features a Metal-Oxide Semiconductor technology and can withstand temperatures from -40 to 125°C.

SOURCE

COMMON SOURCE, 2 ELEMENTS

108 V

.3 ohm

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDFP-F4

2

4

ENHANCEMENT MODE

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLATPACK

N-CHANNEL

17 dB

IEC-60134

YES

FLAT

DUAL

AMPLIFIER

SILICON

ART700FHU by Ampleon Netherlands B V

ART700FHU

Ampleon Netherlands B V

ART700FHU by Ampleon Netherlands B V is an N-CHANNEL RF Power FET with 177V DS Breakdown Voltage, 26.8 dB Power Gain, and operates in the Ultra High Frequency Band. It is a COMMON SOURCE amplifier transistor with METAL-OXIDE SEMICONDUCTOR technology, suitable for high-performance applications requiring a FLANGE MOUNT package style.

SOURCE

COMMON SOURCE, 2 ELEMENTS

177 V

METAL-OXIDE SEMICONDUCTOR

1.04 pF

ULTRA HIGH FREQUENCY BAND

R-CDFM-F4

2

4

ENHANCEMENT MODE

225 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

26.8 dB

IEC-60134

YES

FLAT

DUAL

AMPLIFIER

SILICON