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68 W RF Power Field Effect Transistors (FET) 2

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
BLF175,112 by NXP Semiconductors

BLF175,112

NXP Semiconductors

NXP Semiconductors' BLF175,112 is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage and 4A Drain Current. Ideal for amplifiers in the VHF band, it operates in Enhancement Mode with a max power dissipation of 68W. The METAL-OXIDE SEMICONDUCTOR technology ensures high performance in very high frequency applications.

HIGH RELIABILITY

ISOLATED

SINGLE

125 V

4 A

4 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

VERY HIGH FREQUENCY BAND

O-CRFM-F4

NOT APPLICABLE

1

4

ENHANCEMENT MODE

200 Cel

CERAMIC, METAL-SEALED COFIRED

ROUND

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

68 W

68 W

Not Qualified

FET General Purpose Power

NO

FLAT

RADIAL

NOT SPECIFIED

AMPLIFIER

SILICON

BLF245,112 by NXP Semiconductors

BLF245,112

NXP Semiconductors

NXP Semiconductors BLF245,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 13dB Power Gain. Ideal for amplifier applications in the VHF band, it features a max power dissipation of 68W and operates in enhancement mode at up to 200°C.

LOW NOISE

ISOLATED

SINGLE

65 V

6 A

6 A

.75 ohm

METAL-OXIDE SEMICONDUCTOR

VERY HIGH FREQUENCY BAND

O-CRFM-F4

1

4

ENHANCEMENT MODE

200 Cel

CERAMIC, METAL-SEALED COFIRED

ROUND

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

68 W

68 W

13 dB

Not Qualified

FET General Purpose Power

NO

FLAT

RADIAL

NOT SPECIFIED

AMPLIFIER

SILICON