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389 W RF Power Field Effect Transistors (FET) 5

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
SD2931-10W by STMicroelectronics

SD2931-10W

STMicroelectronics

SD2931-10W by STMicroelectronics is an N-channel RF Power FET with 125V DS breakdown voltage and 20A max drain current. Ideal for UHF band applications, it operates in enhancement mode with a max power dissipation of 389W at 200°C.

SINGLE

125 V

20 A

20 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

O-PRFM-F4

1

4

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

ROUND

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

389 W

FET General Purpose Power

YES

FLAT

RADIAL

NOT SPECIFIED

SILICON

SD2931-10 by STMicroelectronics

SD2931-10

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 389 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Minimum DS Breakdown Voltage: 125 V;

SOURCE

SINGLE

125 V

20 A

20 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

O-PRFM-F4

e4

1

4

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

ROUND

FLANGE MOUNT

N-CHANNEL

389 W

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

FLAT

RADIAL

SILICON

SD4931 by STMicroelectronics

SD4931

STMicroelectronics

SD4931 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 20 A, a breakdown voltage of 200 V, and can dissipate up to 389 W. Ideal for high-performance RF amplification in compact designs.

SINGLE

200 V

20 A

20 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

O-PRFM-F4

1

4

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

ROUND

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

389 W

Not Qualified

FET General Purpose Power

YES

FLAT

RADIAL

NOT SPECIFIED

SILICON

SD2941-10 by STMicroelectronics

SD2941-10

STMicroelectronics

SD2941-10 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 20 A, a breakdown voltage of 130 V, and can dissipate up to 389 W. Ideal for high-performance amplification in communication systems.

SOURCE

SINGLE

130 V

20 A

20 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

O-PRFM-F4

1

4

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

ROUND

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

389 W

Not Qualified

FET General Purpose Power

YES

FLAT

RADIAL

NOT SPECIFIED

SILICON

SD2941-10W by STMicroelectronics

SD2941-10W

STMicroelectronics

SD2941-10W by STMicroelectronics is an N-channel RF Power FET with a max drain current of 20A and power dissipation of 389W. It operates at up to 200°C, making it suitable for high-power applications in industries like telecommunications and broadcasting.

SINGLE

20 A

20 A

METAL-OXIDE SEMICONDUCTOR

e4

3

1

200 Cel

250

N-CHANNEL

389 W

FET General Purpose Powers

NICKEL GOLD

30