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292 W RF Power Field Effect Transistors (FET) 1

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
SD2931 by STMicroelectronics

SD2931

STMicroelectronics

SD2931 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 20 A, a breakdown voltage of 125 V, and can dissipate up to 292 W. Ideal for high-performance amplification in communication systems.

SINGLE

125 V

20 A

20 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

O-PRFM-F4

e0

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

ROUND

FLANGE MOUNT

N-CHANNEL

292 W

Not Qualified

FET General Purpose Power

NO

TIN LEAD

FLAT

RADIAL

SILICON