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269 W RF Power Field Effect Transistors (FET) 1

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
LET9150 by STMicroelectronics

LET9150

STMicroelectronics

LET9150 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 20 A, breakdown voltage of 80 V, and operates in the L band. Ideal for high-power amplification with a compact surface mount design.

SOURCE

SINGLE

80 V

20 A

20 A

METAL-OXIDE SEMICONDUCTOR

L BAND

R-PDFM-F4

e3

1

1

4

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

269 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

AMPLIFIER

SILICON