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20.8 W RF Power Field Effect Transistors (FET) 1

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
PD85006L-E by STMicroelectronics

PD85006L-E

STMicroelectronics

PD85006L-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 2 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount device ensures efficient performance in compact designs.

SOURCE

SINGLE

40 V

2 A

2 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

S-PQCC-N5

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

CHIP CARRIER

NOT SPECIFIED

N-CHANNEL

20.8 W

Not Qualified

FET General Purpose Power

YES

NO LEAD

QUAD

NOT SPECIFIED

AMPLIFIER

SILICON