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19.5 W RF Power Field Effect Transistors (FET) 2

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
PD54003L-E by STMicroelectronics

PD54003L-E

STMicroelectronics

STMicroelectronics PD54003L-E is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage, suitable for AMPLIFIER applications. Operating in ENHANCEMENT MODE, it offers 4A Drain Current and 19.5W Power Dissipation at 150°C max temp in ULTRA HIGH FREQUENCY BAND. Package: PLASTIC/EPOXY CHIP CARRIER with SOURCE connection.

HIGH RELIABILITY

SOURCE

SINGLE

25 V

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

S-PQCC-N5

e3

3

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

CHIP CARRIER

N-CHANNEL

19.5 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

NO LEAD

QUAD

AMPLIFIER

SILICON

PD55008L-E by STMicroelectronics

PD55008L-E

STMicroelectronics

STMicroelectronics' PD55008L-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY, it offers 5A Drain Current and 19.5W Power Dissipation in a SQUARE PLASTIC package with NO LEAD terminals.

HIGH RELIABILITY

SOURCE

SINGLE

40 V

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

S-PQCC-N5

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

CHIP CARRIER

NOT SPECIFIED

N-CHANNEL

19.5 W

Not Qualified

FET General Purpose Power

YES

NO LEAD

QUAD

NOT SPECIFIED

AMPLIFIER

SILICON