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100 W RF Power Field Effect Transistors (FET) 2

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
LET16045C by STMicroelectronics

LET16045C

STMicroelectronics

LET16045C by STMicroelectronics is a N-CHANNEL RF Power FET with 80V DS Breakdown Voltage. It operates in ENHANCEMENT MODE for AMPLIFIER applications in L BAND frequency range. With 9A Drain Current and 100W Power Dissipation, it is suitable for high-power RF amplification needs.

SOURCE

SINGLE

80 V

9 A

9 A

METAL-OXIDE SEMICONDUCTOR

L BAND

R-PDFM-F2

1

2

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

100 W

FET General Purpose Powers

YES

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

LET16060C by STMicroelectronics

LET16060C

STMicroelectronics

LET16060C by STMicroelectronics is a N-CHANNEL RF Power FET with 80V DS Breakdown Voltage, 12A Drain Current, and 100W Power Dissipation. It's used in L BAND applications as an amplifier in enhancement mode operation.

SOURCE

SINGLE

80 V

12 A

12 A

METAL-OXIDE SEMICONDUCTOR

L BAND

R-PDFM-F2

1

2

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

100 W

FET General Purpose Powers

YES

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON