Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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TK100L60W,VQ
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 797 W; No. of Elements: 1; Maximum Drain Current (ID): 100 A;
SINGLE
100 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
150 Cel
N-CHANNEL
797 W
FET General Purpose Power
NO
TK6A60D(STA4,Q,M)
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE; Package Body Material: PLASTIC/EPOXY;
173 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
600 V
6 A
1.25 ohm
R-PSFM-T3
3
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
24 A
THROUGH-HOLE
SWITCHING
SILICON
TK31N60W5,S1VF
Toshiba's TK31N60W5,S1VF is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 123A IDM, 437mJ EAS, and 0.099ohm RDS(ON). Operating in ENHANCEMENT MODE at up to 150°C, it has a max power dissipation of 230W.
437 mJ
DRAIN
30.8 A
.099 ohm
9.5 pF
TO-247
230 W
123 A
TPCA8051-H(T2L1,VM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .0098 ohm; Transistor Application: SWITCHING;
255 mJ
80 V
28 A
.0098 ohm
S-PDSO-F5
5
SQUARE
SMALL OUTLINE
NOT SPECIFIED
84 A
YES
FLAT
DUAL
TK40P04M1(T6RSS-Q)
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: SWITCHING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
41 mJ
40 V
40 A
.0134 ohm
R-PSSO-G2
2
120 A
GULL WING
TK100A10N1,S4X
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; No. of Terminals: 3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
222 mJ
100 V
.0038 ohm
TO-220AB
362 A
TK65A10N1,S4X
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE; No. of Elements: 1;
143 mJ
.0048 ohm
296 A
TK62N60X,S1F
Toshiba's TK62N60X,S1F is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 61.8A Max Drain Current and 0.04 ohm Max RDS(on), making it suitable for high-power ENHANCEMENT MODE operations. With a 247A IDM rating and 698mJ EAS, this transistor offers reliable performance in various power electronics systems.
698 mJ
61.8 A
.04 ohm
247 A
TPCA8052-H(T2L1,VM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Drain Current (Abs) (ID): 20 A; Minimum DS Breakdown Voltage: 40 V;
37 mJ
20 A
.0131 ohm
130 pF
30 W
60 A
TK8A50D(STA4,Q,M)
Toshiba's TK8A50D is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 32A IDM and 165mJ EAS, it operates in ENHANCEMENT MODE with 0.85 ohm RDS(on). The PLASTIC/EPOXY package has RECTANGULAR shape and THROUGH-HOLE terminals for easy mounting.
165 mJ
500 V
8 A
.85 ohm
32 A
TK39A60W,S4VX
Toshiba's TK39A60W,S4VX is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. Featuring 155A IDM and 0.065 ohm RDS(on), it operates in ENHANCEMENT MODE with 608mJ EAS. The PLASTIC/EPOXY package style with THROUGH-HOLE terminals makes it suitable for various power electronics designs.
608 mJ
38.8 A
.065 ohm
155 A
TK7P65W,RQ
Toshiba TK7P65W,RQ is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 27.2A IDM, 90mJ EAS, and 0.8 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with GULL WING terminals and DRAIN case connection.
90 mJ
650 V
6.8 A
.8 ohm
27.2 A
TK34A10N1,S4X
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Maximum Drain-Source On Resistance: .0095 ohm; Package Style (Meter): FLANGE MOUNT;
64 mJ
75 A
.0095 ohm
147 A
2SK3798(STA4,Q,M)
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Drain Current (Abs) (ID): 4 A; Maximum Pulsed Drain Current (IDM): 12 A;
345 mJ
900 V
4 A
3.5 ohm
40 W
12 A
TK090A65Z,S4X
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Maximum Pulsed Drain Current (IDM): 120 A; JESD-30 Code: R-PSFM-T3;
265 mJ
30 A
.09 ohm
2 pF
45 W
TK25A20D,S5X
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; No. of Terminals: 3; JESD-30 Code: R-PSFM-T3;
118 mJ
200 V
25 A
.07 ohm
21 pF
TK380A65Y,S4X
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Pulsed Drain Current (IDM): 38.8 A; Maximum Operating Temperature: 150 Cel;
96 mJ
9.7 A
.38 ohm
2.5 pF
TK5A90E,S4X
Toshiba's TK5A90E,S4X is a N-CHANNEL FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features 13.5A IDM and 202mJ EAS, ensuring efficient power handling. With a max operating temperature of 150°C and 40W power dissipation, it offers reliable performance in various environments.
202 mJ
4.5 A
3.1 ohm
8 pF
260
13.5 A
30
TK65S04K3L(T6L1,NQ)
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 88 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 65 A;
130 mJ
65 A
.0079 ohm
88 W
130 A
AEC-Q101
TK7A80W,S4X
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; No. of Elements: 1; JESD-30 Code: R-PSFM-T3;
310 mJ
800 V
6.5 A
.95 ohm
1.2 pF
35 W
26 A
TPCA8047-H(T2L1,VM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL;
95 mJ
.0085 ohm
200 pF
96 A
TK35A65W5,S5X
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
614 mJ
35 A
.095 ohm
9 pF
50 W
140 A
TK65G10N1,RQ
Toshiba's TK65G10N1,RQ is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features 283A max pulsed drain current and 0.0045 ohm max drain-source resistance. With a small outline package style and 150°C max operating temp, it offers high power dissipation capabilities.
93 mJ
.0045 ohm
42 pF
156 W
283 A
TK32E12N1,S1X
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 98 W; No. of Terminals: 3; Avalanche Energy Rating (EAS): 48 mJ;
48 mJ
120 V
.0138 ohm
13 pF
98 W
110 A
TK380P65Y,RQ
Toshiba's TK380P65Y,RQ is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for SWITCHING applications. It features 38.8A max pulsed drain current and 96mJ avalanche energy rating, suitable for high-power operations. With a small outline package style and GULL WING terminals, it offers efficient performance up to 150°C operating temperature.
80 W
XPW4R10ANB,L1XHQ
Toshiba XPW4R10ANB,L1XHQ is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 210A IDM, 241mJ EAS, and 0.0062 ohm Drain-Source On Resistance. Suitable for high-power circuits requiring fast switching capabilities in automotive and industrial electronics.
241 mJ
70 A
.0062 ohm
300 pF
S-PDSO-F8
8
175 Cel
170 W
210 A
SSM3K335R,LF
Toshiba's SSM3K335R,LF is a N-CHANNEL FET with 30V DS Breakdown Voltage and 14A IDM. Ideal for SWITCHING applications, it features a 0.038 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE at up to 150°C.
30 V
.038 ohm
20 pF
R-PDSO-F3
1 W
14 A
TK5A60W,S4VX
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Drain-Source On Resistance: .9 ohm; No. of Terminals: 3;
71 mJ
5.4 A
.9 ohm
1.5 pF
21.6 A
TK16G60W,RVQ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; JESD-30 Code: R-PSSO-G2; Package Body Material: PLASTIC/EPOXY;
194 mJ
15.8 A
.19 ohm
4 pF
130 W
63.2 A
TK12P60W,RVQ(S
Toshiba's TK12P60W,RVQ(S is an N-CHANNEL FET for SWITCHING applications. Features include 600V DS Breakdown Voltage, 46A IDM, and 0.34 ohm Drain-Source On Resistance. Ideal for high-power switching circuits requiring fast operation and low resistance.
140 mJ
11.5 A
.34 ohm
2.8 pF
100 W
46 A
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