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Panjit International Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PJD10P10A_L2_00001 by Panjit International

PJD10P10A_L2_00001

Panjit International

PJD10P10A_L2_00001 by Panjit Int. is a P-CHANNEL FET with 100V DS Breakdown Voltage, 40A IDM, and 0.21 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE, it operates b/w -55 to 150 °C with SILICON element material.

SINGLE WITH BUILT-IN DIODE

100 V

2 A

.21 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

40 A

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

PJA3416A_R1_00001 by Panjit International

PJA3416A_R1_00001

Panjit International

PJA3416A_R1_00001 by Panjit Int. is a N-CHANNEL FET with 20V DS breakdown voltage, 5.8A max drain current, and 0.024 ohm on-resistance. Ideal for switching applications due to its single configuration with built-in diode and 23.2A pulsed drain current capacity in a small outline package shape.

SINGLE WITH BUILT-IN DIODE

20 V

5.8 A

.024 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

23.2 A

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON