Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IXTN79N20
IXYS Corporation
IXTN79N20 by IXYS Corp is a N-CHANNEL FET with 200V DS Breakdown Voltage, 79A ID, and 0.025 ohm RDS. Ideal for SWITCHING applications due to its 340A IDM and 350W Pd capabilities. Package style is FLANGE MOUNT with SILICON element material and ENHANCEMENT MODE operation at up to 150°C.
ISOLATED
SINGLE WITH BUILT-IN DIODE
200 V
79 A
.025 ohm
METAL-OXIDE SEMICONDUCTOR
R-PUFM-X4
1
4
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
400 W
350 W
340 A
Not Qualified
FET General Purpose Power
NO
NICKEL
UNSPECIFIED
UPPER
SWITCHING
SILICON
IXTH75N10
IXTH75N10 by IXYS Corp is a N-CHANNEL FET with 100V DS Breakdown Voltage, 75A ID, and 0.02 ohm RDS. It's used for SWITCHING applications due to its 300A IDM and 250W Pd. The PLASTIC/EPOXY package with THROUGH-HOLE terminals makes it suitable for various power electronics designs.
DRAIN
100 V
75 A
.02 ohm
TO-247AD
R-PSFM-T3
e3
3
300 W
250 W
300 A
MATTE TIN
THROUGH-HOLE
SINGLE
IXTN21N100
IXTN21N100 by IXYS Corp is a N-CHANNEL FET with 1000V DS breakdown voltage, 84A IDM, and 0.55 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with max power dissipation of 520W. The transistor features a single configuration with built-in diode and comes in a rectangular package shape.
1000 V
21 A
.55 ohm
520 W
84 A
IXFH32N50Q
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 360 W; Package Body Material: PLASTIC/EPOXY; Avalanche Energy Rating (EAS): 1500 mJ;
AVALANCHE RATED
1500 mJ
500 V
32 A
.16 ohm
360 W
128 A
IXFN48N50U2
IXYS Corporation's IXFN48N50U2 is a N-CHANNEL FET with 500V DS breakdown voltage and 48A max drain current. Ideal for switching applications, it operates in enhancement mode with 192A pulsed drain current. The transistor features a built-in diode, 0.1 ohm max on-resistance, and can handle up to 520W power dissipation.
48 A
.1 ohm
192 A
IXFK55N50
IXYS Corporation's IXFK55N50 is a N-CHANNEL FET with 500V DS breakdown voltage and 55A max drain current. Ideal for switching applications, it features a built-in diode, 220A pulsed drain current, and 0.09 ohm max on resistance.
55 A
.09 ohm
TO-264AA
NOT SPECIFIED
560 W
220 A
IXFN80N50
IXYS Corporation's IXFN80N50 is a N-CHANNEL FET with 500V DS breakdown voltage and 320A IDM. Ideal for switching applications, it has a max power dissipation of 700W, 0.055 ohm RDS(on), and operates in the -55 to 150 °C temperature range.
6000 mJ
80 A
.055 ohm
-55 Cel
700 W
320 A
IXFR24N50Q
IXYS Corporation's IXFR24N50Q is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 96A max pulsed drain current, 0.23 ohm max on-resistance, and 150°C max operating temperature. The transistor has a single configuration with built-in diode in a plastic/epoxy package suitable for high-power operations.
22 A
.23 ohm
R-PSIP-T3
IN-LINE
96 A
IXFH12N50F
IXYS Corporation's IXFH12N50F is a N-CHANNEL FET with 500V DS breakdown voltage and 48A IDM. Ideal for switching applications, it operates in enhancement mode with 0.4 ohm RDS(on) and 150°C max temp.
300 mJ
12 A
.4 ohm
TO-247
VWM270-0075X2
IXYS Corporation's VWM270-0075X2 is a N-CHANNEL FET with 6 elements in bridge configuration. It has a DS Breakdown Voltage of 75V, Drain Current of 270A, and On Resistance of 0.0021 ohm. Ideal for switching applications due to its high current capacity and low on-resistance.
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
75 V
270 A
.0021 ohm
R-XUFM-X17
6
17
175 Cel
IXTY01N80
IXYS Corporation's IXTY01N80 is a N-CHANNEL FET with 800V DS breakdown voltage. It is used for switching applications in enhancement mode, featuring a max ID of 0.1A and RDS(on) of 50 ohm. The transistor operates at up to 150°C, making it suitable for various power control systems.
800 V
.1 A
50 ohm
TO-252AA
R-PSSO-G2
2
SMALL OUTLINE
260
.4 A
YES
GULL WING
10
IXFK24N100F
IXYS Corporation's IXFK24N100F is a N-CHANNEL FET with 1000V DS Breakdown Voltage, 96A IDM, and 0.0039 ohm RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and 3000 mJ EAS rating. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
3000 mJ
24 A
.0039 ohm
IXFE80N50
IXYS Corporation's IXFE80N50 is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 320A IDM and 6000mJ EAS, this ENHANCEMENT MODE transistor has 0.055 ohm RDS(on) and operates at up to 150°C.
72 A
580 W
VWM350-0075P
IXYS Corporation's VWM350-0075P is a N-CHANNEL FET with 6 elements in bridge configuration. It operates in enhancement mode, with 75V DS breakdown voltage and 340A max drain current. Ideal for switching applications due to low 0.0033 ohm RDS(on) and isolated case connection.
.0033 ohm
R-XUFM-X24
24
IXFH28N50Q
IXYS Corporation's IXFH28N50Q is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 112A IDM and 0.2 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150°C. The transistor has a PLASTIC/EPOXY body, RECTANGULAR shape, and THROUGH-HOLE terminals for easy installation.
28 A
.2 ohm
112 A
IXTP110N055P
IXTP110N055P by IXYS Corp is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 250A IDM, 1000mJ EAS, and 0.0135 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE at up to 175°C, with a SILICON element and MATTE TIN finish.
1000 mJ
55 V
110 A
.0135 ohm
TO-220AB
250 A
VMM1500-0075P
IXYS Corporation's VMM1500-0075P is a N-CHANNEL FET with 75V DS Breakdown Voltage, 1500A ID, and 0.0008 ohm RDS. It features SERIES CONNECTED, CENTER TAP configuration for SWITCHING applications. This RECTANGULAR package has 2 elements in ENHANCEMENT MODE suitable for high-power operations.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
1500 A
.0008 ohm
R-XUFM-X7
7
IXTY1R6N50P
IXYS Corporation's IXTY1R6N50P is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it has 2.5A max pulsed drain current and 6.5 ohm max drain-source resistance. Suitable for enhancement mode operation at up to 150°C, this MOSFET offers high performance in compact small outline package style.
75 mJ
1.6 A
6.5 ohm
2.5 A
VMM1000-01P
IXYS Corporation's VMM1000-01P is a N-CHANNEL FET with 2 SERIES CONNECTED elements. It has a 100V DS Breakdown Voltage, 0.0012 ohm RDS(on), and 1000A ID. Ideal for SWITCHING applications, this RECTANGULAR package FET operates in ENHANCEMENT MODE with SILICON material technology.
1000 A
.0012 ohm
MKE38P600LB-TUB
IXYS Corporation's MKE38P600LB-TUB is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring series connected elements with built-in diode, it has a max ID of 50A and 0.045 ohm RDS(on). Operating in enhancement mode, this MOSFET has an EAS of 1950mJ and can withstand temperatures from -55 to 150°C.
HIGH RELIABILITY
1950 mJ
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
600 V
50 A
.045 ohm
R-PDSO-G9
9
UL RECOGNIZED
DUAL
IXTT110N10L2-TRL
Power Field-Effect Transistors;
IXFA230N075T2-TRL
Power Field-Effect Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: Matte Tin (Sn); Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 10;
Matte Tin (Sn)
IXTA1R4N120P-TRL
IXTA1R4N120P-TRL by IXYS Corp is a N-CHANNEL FET with 1200V DS breakdown voltage, 3A IDM, and 150mJ EAS. Ideal for switching applications, it operates in enhancement mode with -55 to 150 °C temperature range. The single package has GULL WING terminals and offers high power dissipation of 86W in a small outline style.
150 mJ
1200 V
1.4 A
13 ohm
7.6 pF
TO-263AB
86 W
3 A
IXTA3N50D2-TRL
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 10; Peak Reflow Temperature (C): 260; Terminal Finish: Matte Tin (Sn); Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
IXTA64N10L2-TRL
Power Field-Effect Transistors; Terminal Finish: Matte Tin (Sn); Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 10;
IXTY08N100P-TRL
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