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N-Channel Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FF45MR12W1M1B11BOMA1 by Infineon Technologies

FF45MR12W1M1B11BOMA1

Infineon Technologies

Infineon's FF45MR12W1M1B11BOMA1 is a N-Channel FET with 1200V DS Breakdown Voltage, 5.55V VCEsat, and 0.045ohm RDS(on). Ideal for switching applications, it features SERIES CONNECTED configuration with built-in diode and thermistor. Operating in enhancement mode, this FET has a max pulsed drain current of 50A and can withstand temperatures from -40 to 150°C.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

.045 ohm

METAL-OXIDE SEMICONDUCTOR

14 pF

20 V

R-XUFM-X10

2

10

ENHANCEMENT MODE

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-Channel

50 A

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON

55300 ns

14100 ns

5.55 V