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89.3 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTMFS4982NFT1G by Onsemi

NTMFS4982NFT1G

Onsemi

NTMFS4982NFT1G by Onsemi is a N-CHANNEL FET for SWITCHING applications. It has a 30V DS Breakdown Voltage, 350A IDM, and 0.0019 ohm RDS(on). With a max power dissipation of 89.3W and operating temperature of 150 °C, it offers high performance in a small outline package.

125 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

36 A

26.5 A

.0019 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

89.3 W

350 A

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

NTMFS4982NFT3G by Onsemi

NTMFS4982NFT3G

Onsemi

NTMFS4982NFT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 350A IDM, and 0.0019 ohm RDS(ON). Ideal for SWITCHING applications, it has a max power dissipation of 89.3W and operates at temperatures up to 150 °C.

125 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

36 A

26.5 A

.0019 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

89.3 W

350 A

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

DMT6006SPS-13 by Diodes Incorporated

DMT6006SPS-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89.3 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 390 A;

87.9 mJ

SINGLE WITH BUILT-IN DIODE

60 V

98 A

98 A

.0062 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

89.3 W

390 A

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMT67M8LK3-13 by Diodes Incorporated

DMT67M8LK3-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89.3 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JEDEC-95 Code: TO-252;

84.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

87 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

70 pF

TO-252

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

89.3 W

345 A

IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

DMT6006LK3-13 by Diodes Incorporated

DMT6006LK3-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89.3 W; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

40.7 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

88 A

.0065 ohm

METAL-OXIDE SEMICONDUCTOR

58 pF

TO-252

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

89.3 W

350 A

MIL-STD-202

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON