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86.2 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTMFS4852NT1G by Onsemi

NTMFS4852NT1G

Onsemi

NTMFS4852NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 310A IDM, and 0.0033 ohm RDS(on). Ideal for SWITCHING applications due to its 155A ID, 360mJ EAS rating, and ENHANCEMENT MODE operation. Suitable for high-power systems requiring efficient power dissipation in a SMALL OUTLINE package.

360 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

155 A

16 A

.0033 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

86.2 W

310 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

NTMFS4852NT3G by Onsemi

NTMFS4852NT3G

Onsemi

NTMFS4852NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 310A and EAS of 360mJ, making it suitable for high-power operations. With 0.0033 ohm RDS(on) and 86.2W Pd, this MOSFET offers efficient performance in a small outline package.

360 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

155 A

16 A

.0033 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

86.2 W

310 A

Not Qualified

FET General Purpose Power

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON