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83.3 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SQD50N04-09H-GE3 by Vishay Intertechnology

SQD50N04-09H-GE3

Vishay Intertechnology

Vishay Intertechnology's SQD50N04-09H-GE3 is a N-channel Power FET with 40V DS breakdown voltage and 50A max drain current. Ideal for applications requiring high power dissipation, such as in power supplies or motor control systems. Features include built-in diode, small outline package style, and matte tin terminal finish.

76 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

50 A

50 A

.009 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

83.3 W

100 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

IPP65R420CFDXKSA2 by Infineon Technologies

IPP65R420CFDXKSA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83.3 W; Terminal Form: THROUGH-HOLE; No. of Elements: 1;

227 mJ

SINGLE WITH BUILT-IN DIODE

650 V

8.7 A

8.7 A

.42 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

83.3 W

27 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPW65R420CFDFKSA2 by Infineon Technologies

IPW65R420CFDFKSA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83.3 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;

227 mJ

SINGLE WITH BUILT-IN DIODE

650 V

8.7 A

8.7 A

.42 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

83.3 W

27 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

DMT6009LJ3 by Diodes Incorporated

DMT6009LJ3

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83.3 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 60 V;

39.8 mJ

SINGLE

60 V

74.5 A

74.5 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

41 pF

TO-251

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

2.9 W

83.3 W

280 A

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

FCP9N60N-F102 by Onsemi

FCP9N60N-F102

Onsemi

FCP9N60N-F102 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage and 27A IDM. Ideal for SWITCHING applications, it features a built-in diode, 135mJ EAS rating, and 0.385 ohm RDS(on).

135 mJ

SINGLE WITH BUILT-IN DIODE

600 V

9 A

9 A

.385 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

83.3 W

27 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

114.2 ns

62.8 ns