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8.3 W Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BLF404,115 by NXP Semiconductors

BLF404,115

NXP Semiconductors

NXP Semiconductors BLF404,115 is a single N-CHANNEL FET with 1.5A max drain current and 8.3W power dissipation. Ideal for applications requiring high-power amplification in enhancement mode operation up to 200°C, utilizing metal-oxide semiconductor technology for efficient performance.

SINGLE

1.5 A

1.5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

200 Cel

N-CHANNEL

8.3 W

FET General Purpose Power

YES

BUK7880-55,135 by NXP Semiconductors

BUK7880-55,135

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.3 W; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30;

LOGIC LEVEL COMPATIBLE

30 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

7.5 A

7.5 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

85 pF

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

8.3 W

8.3 W

40 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

45 ns

39 ns

BUK9840-55,115 by NXP Semiconductors

BUK9840-55,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.3 W; Avalanche Energy Rating (EAS): 60 mJ; Operating Mode: ENHANCEMENT MODE;

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

10.7 A

5 A

.04 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

8.3 W

40 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

BUK9880-55,135 by NXP Semiconductors

BUK9880-55,135

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.3 W; Additional Features: ESD PROTECTED, LOGIC LEVEL COMPATIBLE; Maximum Drain Current (ID): 3.5 A;

ESD PROTECTED, LOGIC LEVEL COMPATIBLE

30 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

7.5 A

3.5 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

8.3 W

40 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON