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73.5 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTB5605PT4 by Onsemi

NTB5605PT4

Onsemi

NTB5605PT4 by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 55A IDM, and 0.14 ohm RDS(on). With a max power dissipation of 73.5W and operating temperature up to 150 °C, it's ideal for high-power switching circuits.

338 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

17 A

18.5 A

.14 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

73.5 W

55 A

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTB5605P by Onsemi

NTB5605P

Onsemi

The Onsemi NTB5605P is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 55A and EAS of 338mJ, suitable for high-power operations. With a low 0.14 ohm RDS(on), it offers efficient performance in ENHANCEMENT MODE operation at up to 150 °C.

338 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

17 A

18.5 A

.14 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

73.5 W

55 A

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTB5605PG by Onsemi

NTB5605PG

Onsemi

NTB5605PG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage and 55A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.14 ohm RDS(on), and 150°C max operating temp.

338 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

17 A

18.5 A

.14 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

73.5 W

55 A

Not Qualified

Other Transistors

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON