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700 W Power Field Effect Transistors (FET) 3

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BLA0912-250R,112 by NXP Semiconductors

BLA0912-250R,112

NXP Semiconductors

BLA0912-250R,112 by NXP Semiconductors is an N-channel enhancement mode FET designed for high-power applications. It features a max power dissipation of 700 W and operates effectively up to 200 °C. Ideal for power management in various electronic devices.

SINGLE

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

200 Cel

N-CHANNEL

700 W

FET General Purpose Power

BLA1011S-200R,112 by NXP Semiconductors

BLA1011S-200R,112

NXP Semiconductors

NXP Semiconductors BLA1011S-200R,112 is a N-CHANNEL FET with 700W power dissipation. It operates in enhancement mode and can withstand temperatures up to 200°C. Ideal for high-power applications requiring efficient switching capabilities.

SINGLE

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

200 Cel

N-CHANNEL

700 W

FET General Purpose Power

IXFN80N50 by IXYS Corporation

IXFN80N50

IXYS Corporation

IXYS Corporation's IXFN80N50 is a N-CHANNEL FET with 500V DS breakdown voltage and 320A IDM. Ideal for switching applications, it has a max power dissipation of 700W, 0.055 ohm RDS(on), and operates in the -55 to 150 °C temperature range.

AVALANCHE RATED

6000 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

500 V

80 A

80 A

.055 ohm

METAL-OXIDE SEMICONDUCTOR

R-PUFM-X4

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

700 W

320 A

Not Qualified

FET General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON