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61 W Power Field Effect Transistors (FET) 10

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FQD6N50CTF by Fairchild Semiconductor

FQD6N50CTF

Fairchild Semiconductor

FQD6N50CTF by Fairchild Semiconductor is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 18A IDM, 300mJ EAS, and 1.2ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 61W at 150°C.

300 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

500 V

4.5 A

4.5 A

1.2 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

61 W

18 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

NDD04N50Z-1G by Onsemi

NDD04N50Z-1G

Onsemi

NDD04N50Z-1G by Onsemi is a Power FET with 500V DS Breakdown Voltage, 12A IDM, and 0.0027 ohm RDS(on). Ideal for power applications requiring high voltage tolerance and low on-resistance. Suitable for use in enhancement mode operations at up to 150 °C temperature.

120 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

500 V

3 A

3 A

.0027 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

61 W

12 A

Not Qualified

FET General Purpose Powers

NO

TIN

THROUGH-HOLE

SINGLE

30

SILICON

BUK7575-55,127 by NXP Semiconductors

BUK7575-55,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 61 W; Terminal Position: SINGLE; Maximum Feedback Capacitance (Crss): 85 pF;

ESD PROTECTION

30 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

19.7 A

19.7 A

.075 ohm

METAL-OXIDE SEMICONDUCTOR

85 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

61 W

61 W

79 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

45 ns

35 ns

NDD03N60ZT4G by Onsemi

NDD03N60ZT4G

Onsemi

NDD03N60ZT4G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 10A IDM, and 3.6 ohm RDS(on). Ideal for power applications requiring high voltage tolerance and current handling capabilities. Suitable for use in power supplies, motor control, and industrial equipment due to its robust design and performance.

100 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

2.6 A

2.6 A

3.6 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

61 W

10 A

Not Qualified

FET General Purpose Powers

YES

TIN

GULL WING

SINGLE

30

SILICON

NVMFS5C670NLWFAFT3G by Onsemi

NVMFS5C670NLWFAFT3G

Onsemi

NVMFS5C670NLWFAFT3G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 440A IDM, and 0.0088 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.

166 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

71 A

71 A

.0088 ohm

METAL-OXIDE SEMICONDUCTOR

15 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

61 W

440 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

IPU60R1K0CEAKMA2 by Infineon Technologies

IPU60R1K0CEAKMA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 61 W; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR;

46 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

6.8 A

1 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

61 W

12 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPD60R1K0CEATMA1 by Infineon Technologies

IPD60R1K0CEATMA1

Infineon Technologies

IPD60R1K0CEATMA1 by Infineon is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a 12A IDM and 1 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 61W and can withstand temperatures from -40 to 150°C.

46 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

6.8 A

1 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

61 W

12 A

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPU60R1K0CEBKMA1 by Infineon Technologies

IPU60R1K0CEBKMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 61 W; Maximum Pulsed Drain Current (IDM): 12 A; JESD-30 Code: R-PSIP-T3;

46 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

6.8 A

1 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

61 W

12 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPU60R1K0CEAKMA1 by Infineon Technologies

IPU60R1K0CEAKMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 61 W; Minimum DS Breakdown Voltage: 600 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

46 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

6.8 A

1 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

61 W

12 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NTMFS5C670NT1G by Onsemi

NTMFS5C670NT1G

Onsemi

NTMFS5C670NT1G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 440A IDM, and 0.007 ohm RDS(on). It is used in power management applications due to its high drain current capacity and low on-resistance. The transistor operates in enhancement mode with a max operating temperature of 175 °C.

166 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

71 A

71 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

8.5 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

61 W

440 A

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON