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6.2 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PMT760EN,115 by NXP Semiconductors

PMT760EN,115

NXP Semiconductors

NXP Semiconductors' PMT760EN,115 is a N-CHANNEL FET with 0.9A ID and 6.2W power dissipation in enhancement mode. Ideal for applications requiring high drain current up to 150°C, such as power management systems.

SINGLE

.9 A

.9 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

6.2 W

FET General Purpose Power

YES

PMT760EN,135 by NXP Semiconductors

PMT760EN,135

NXP Semiconductors

NXP Semiconductors' PMT760EN,135 is a N-CHANNEL FET with 0.9A ID and 6.2W power dissipation. Ideal for applications requiring high efficiency in enhancement mode operation at up to 150°C, this surface-mount transistor offers reliable performance in various power management systems.

SINGLE

.9 A

.9 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

6.2 W

FET General Purpose Power

YES