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59 W Power Field Effect Transistors (FET) 1

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
RH6G040BGTB1 by ROHM

RH6G040BGTB1

ROHM

ROHM's RH6G040BGTB1 is a N-CHANNEL FET with 40V DS breakdown voltage, 380A IDM, and 0.0036 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max temp of 150°C.

56 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

40 A

.0036 ohm

METAL-OXIDE SEMICONDUCTOR

85 pF

R-PDSO-F8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

59 W

380 A

YES

FLAT

DUAL

SWITCHING

SILICON