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57 W Power Field Effect Transistors (FET) 8

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PSMN7R0-100XS,127 by NXP Semiconductors

PSMN7R0-100XS,127

NXP Semiconductors

PSMN7R0-100XS,127 from NXP Semiconductors is an N-channel enhancement mode FET ideal for power management applications. It supports a max drain current of 55 A and power dissipation of 57 W, operating up to 175 °C. This makes it suitable for high-efficiency designs in automotive and industrial sectors.

SINGLE

55 A

55 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

57 W

FET General Purpose Power

NO

NDD02N60Z-1G by Onsemi

NDD02N60Z-1G

Onsemi

NDD02N60Z-1G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 9A IDM, and 4.8 ohm RDS(on). It's an N-CHANNEL transistor in PLASTIC/EPOXY package ideal for power applications requiring high voltage handling and low on-resistance.

120 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

2.2 A

2.2 A

4.8 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

57 W

9 A

Not Qualified

FET General Purpose Powers

NO

TIN

THROUGH-HOLE

SINGLE

30

SILICON

BSB280N15NZ3GXUMA1 by Infineon Technologies

BSB280N15NZ3GXUMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Maximum Drain Current (Abs) (ID): 30 A; Operating Mode: ENHANCEMENT MODE;

120 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

150 V

30 A

9 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

R-MBCC-N3

e4

3

1

3

ENHANCEMENT MODE

150 Cel

METAL

RECTANGULAR

CHIP CARRIER

N-CHANNEL

57 W

120 A

FET General Purpose Powers

YES

SILVER NICKEL

NO LEAD

BOTTOM

SWITCHING

SILICON

FDD6637_F085 by Fairchild Semiconductor

FDD6637_F085

Fairchild Semiconductor

FDD6637_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 35V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 55A, 0.0116 ohm On Resistance, and operates in ENHANCEMENT MODE. This METAL-OXIDE SEMICONDUCTOR transistor has a max power dissipation of 57W and can withstand temperatures up to 175°C.

ULTRA-LOW RESISTANCE

61 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

35 V

55 A

21 A

.0116 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

57 W

Not Qualified

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

IRFR5505GTRPBF by International Rectifier

IRFR5505GTRPBF

International Rectifier

IRFR5505GTRPBF by International Rectifier is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 64A and EAS of 150mJ, operating in ENHANCEMENT MODE. With a 0.11 ohm RDS(on), it can handle up to 18A drain current and dissipate 57W power at max temp of 175°C.

150 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

18 A

18 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

57 W

64 A

Not Qualified

Other Transistors

YES

MATTE TIN OVER NICKEL

GULL WING

SINGLE

SWITCHING

SILICON

BSB017N03LX3G by Infineon Technologies

BSB017N03LX3G

Infineon Technologies

Infineon's BSB017N03LX3G is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 400A IDM, 225mJ EAS, and 0.0017 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 57W and operates b/w -40 to 150 °C.

225 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

147 A

.0017 ohm

METAL-OXIDE SEMICONDUCTOR

R-MBCC-N3

3

1

3

ENHANCEMENT MODE

150 Cel

-40 Cel

METAL

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

57 W

400 A

Not Qualified

YES

NO LEAD

BOTTOM

SWITCHING

SILICON

BSB012NE2LX by Infineon Technologies

BSB012NE2LX

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Avalanche Energy Rating (EAS): 285 mJ; Maximum Drain Current (Abs) (ID): 170 A;

285 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

170 A

39 A

.0012 ohm

METAL-OXIDE SEMICONDUCTOR

R-MBCC-N2

1

2

ENHANCEMENT MODE

150 Cel

METAL

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

N-CHANNEL

57 W

400 A

Not Qualified

FET General Purpose Power

YES

NO LEAD

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

DMJ70H1D3SK3-13 by Diodes Incorporated

DMJ70H1D3SK3-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Maximum Feedback Capacitance (Crss): 2.8 pF; JESD-609 Code: e3;

29 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

700 V

4.7 A

1.4 ohm

METAL-OXIDE SEMICONDUCTOR

2.8 pF

TO-252

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

57 W

5 A

MIL-STD-202

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON