Loading...

568 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
VS-FB190SA10 by Vishay Intertechnology

VS-FB190SA10

Vishay Intertechnology

VS-FB190SA10 by Vishay Intertechnology is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 720A IDM, 700mJ EAS, and 0.0065 ohm Drain-Source On Resistance. With a max power dissipation of 568W and operating temperature of 150°C, it offers high performance in various industrial settings.

AVALANCHE RATED

700 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

100 V

190 A

.0065 ohm

METAL-OXIDE SEMICONDUCTOR

R-PUFM-X4

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

568 W

720 A

Not Qualified

FET General Purpose Power

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON

NTHL019N60S5F by Onsemi

NTHL019N60S5F

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 568 W; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-PSFM-T3;

1208 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

75 A

.019 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

568 W

393 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON