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55.5 W Power Field Effect Transistors (FET) 2

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTMFS4946NT1G by Onsemi

NTMFS4946NT1G

Onsemi

NTMFS4946NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 200A IDM, 205mJ EAS, and 0.0051 ohm RDS(ON). Operating temp range -55 to 150 °C.

205 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

100 A

12.7 A

.0051 ohm

METAL-OXIDE SEMICONDUCTOR

289 pF

R-PDSO-F6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

55.5 W

200 A

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

IGT60R190D1SATMA1 by Infineon Technologies

IGT60R190D1SATMA1

Infineon Technologies

Infineon's IGT60R190D1SATMA1 is a N-CHANNEL FET for SWITCHING applications. With 600V DS Breakdown Voltage, it offers 23A IDM and 0.19 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, this GaN transistor has a max power dissipation of 55.5W and operates b/w -55 to 150 °C.

DRAIN

SINGLE

600 V

12.5 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

.15 pF

R-PSSO-F3

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

55.5 W

23 A

YES

FLAT

SINGLE

SWITCHING

GALLIUM NITRIDE